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S-LP2301ALT1G - P-Channel MOSFET

Datasheet Summary

Features

  • RDS(ON) ≦110mΩ@VGS=-4.5V.
  • RDS(ON) ≦150mΩ@VGS=-2.5V.
  • Super high density cell design for extremely low RDS(ON).
  • S- Prefix for Automotive and Other.

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Datasheet Details

Part number S-LP2301ALT1G
Manufacturer LRC
File Size 1.23 MB
Description P-Channel MOSFET
Datasheet download datasheet S-LP2301ALT1G Datasheet
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Full PDF Text Transcription

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LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET FEATURES ● RDS(ON) ≦110mΩ@VGS=-4.5V ● RDS(ON) ≦150mΩ@VGS=-2.5V ● Super high density cell design for extremely low RDS(ON) ● S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powered System ● Load Switch ● DSC ● We declare that the material of product are Halogen Free and compliance with RoHS requirements.
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