S-LP2301ALT1G - P-Channel MOSFET

LRC

Key Features

RDS(ON) ≦110mΩ@VGS=-4.5V.
RDS(ON) ≦150mΩ@VGS=-2.5V.
Super high density cell design for extremely low RDS(ON).
S- Prefix for Automotive and Other.

S-LP2301ALT1G p-channel mosfet by LRC - Datasheet Preview

Datasheet Details

Part number	S-LP2301ALT1G
Manufacturer	LRC
File Size	1.23 MB
Description	P-Channel MOSFET
Datasheet	S-LP2301ALT1G Datasheet

Full PDF Text Transcription for S-LP2301ALT1G (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for S-LP2301ALT1G. For precise diagrams, and layout, please refer to the original PDF.

LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET FEATURES ● RDS(ON) ≦110mΩ@VGS=-4.5V ● RDS(ON) ≦150mΩ@VGS=-2.5V ● Super high density cell design for extre...

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● RDS(ON) ≦150mΩ@VGS=-2.5V ● Super high density cell design for extremely low RDS(ON) ● S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powered System ● Load Switch ● DSC ● We declare that the material of product are Halogen Free and compliance with RoHS requirements.

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