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LESHAN RADIO COMPANY, LTD.
8V P-Channel Enhancement-Mode MOSFET
VDS= -8V RDS(ON), Vgs@-4.5V, Ids@"3.5A = 68 mΩ RDS(ON), Vgs@-2.5V, Ids@"3A = 81 mΩ RDS(ON), Vgs@-1.8V, Ids@"2A = 118 mΩ
Features
Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM we declare that the material of product compliance with RoHS requirements . S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
S-LP2305DSLT1G Datasheet
