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S-LP3415ELT1G - P-Channel MOSFET

Key Features

  • Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance we declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other.

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Datasheet Details

Part number S-LP3415ELT1G
Manufacturer LRC
File Size 284.10 KB
Description P-Channel MOSFET
Datasheet download datasheet S-LP3415ELT1G Datasheet

Full PDF Text Transcription for S-LP3415ELT1G (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for S-LP3415ELT1G. For precise diagrams, and layout, please refer to the original PDF.

LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-4A = 60 mΩ RDS(ON), Vgs@-2.5V, Ids@-4A = 75 mΩ RDS(ON), Vgs@-1.8V, Ids...

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4A = 60 mΩ RDS(ON), Vgs@-2.5V, Ids@-4A = 75 mΩ RDS(ON), Vgs@-1.8V, Ids@-2A = 85 mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance we declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

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