Datasheet4U Logo Datasheet4U.com

S-LP3415ELT1G - P-Channel MOSFET

Datasheet Summary

Features

  • Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance we declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other.

📥 Download Datasheet

Datasheet preview – S-LP3415ELT1G

Datasheet Details

Part number S-LP3415ELT1G
Manufacturer LRC
File Size 284.10 KB
Description P-Channel MOSFET
Datasheet download datasheet S-LP3415ELT1G Datasheet
Additional preview pages of the S-LP3415ELT1G datasheet.

📁 Similar Datasheet

  • S-L1SS400CST5G - Switching diode (Leshan Radio Company)
  • S-L1SS400T1G - Switching Diode (Leshan Radio Company)
  • S-L2980 - CMOS VOLTAGE REGULATOR (ABLIC)
  • S-L2980 - High Ripple Rejection Low Dropout CMOS Voltage Regulator (Seiko Instruments)
  • S-L2985 - High Ripple Rejection WLP Package Low Dropout CMOS Voltage Regulator (Seiko Instruments)
  • S-L2N7002LT1G - Small Signal MOSFET (Leshan Radio Company)
  • S-L2SA1365ELT1G - General Purpose Transistor (Leshan Radio Company)
  • S-L2SA1365ELT3G - General Purpose Transistor (Leshan Radio Company)
  • S-L2SA1365FLT1G - General Purpose Transistor (Leshan Radio Company)
  • S-L2SA1365FLT3G - General Purpose Transistor (Leshan Radio Company)
Other Datasheets by LRC

Full PDF Text Transcription

Click to expand full text
LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-4A = 60 mΩ RDS(ON), Vgs@-2.5V, Ids@-4A = 75 mΩ RDS(ON), Vgs@-1.8V, Ids@-2A = 85 mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance we declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
Published: |