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S-LP9435LT1G - P-Channel MOSFET

Key Features

  • Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Improved Shoot-Through FOM S- Prefix for Automotive and Other.

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Datasheet Details

Part number S-LP9435LT1G
Manufacturer LRC
File Size 403.06 KB
Description P-Channel MOSFET
Datasheet download datasheet S-LP9435LT1G Datasheet

Full PDF Text Transcription for S-LP9435LT1G (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for S-LP9435LT1G. For precise diagrams, and layout, please refer to the original PDF.

LESHAN RADIO COMPANY, LTD. 30V P-Channel Enhancement-Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, Ids@-5.3A = 70mΩ RDS(ON), Vgs@-4.5V, Ids@-4.2A = 100mΩ Features Advanced tre...

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.3A = 70mΩ RDS(ON), Vgs@-4.5V, Ids@-4.2A = 100mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Improved Shoot-Through FOM S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

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