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LEF100G602 - IGBT

Description

Pin Number 1~6, 29~34 7~9, 26~28 10~12

Features

  • Non punch through (NPT) technology.
  • Ultra-fast.
  • 10μs Short circuit current.
  • Positive VCE(on) temperature coefficient.
  • Free wheeling diodes with fast and soft reverse recovery SISPM™ 600V 100A 4-Pack IGBT Module Target data.

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Datasheet preview – LEF100G602

Datasheet Details

Part number LEF100G602
Manufacturer LSIS
File Size 224.84 KB
Description IGBT
Datasheet download datasheet LEF100G602 Datasheet
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Full PDF Text Transcription

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LEF100G602 Features • Non punch through (NPT) technology • Ultra-fast • 10μs Short circuit current • Positive VCE(on) temperature coefficient • Free wheeling diodes with fast and soft reverse recovery SISPM™ 600V 100A 4-Pack IGBT Module Target data Applications • Power supply • UPS / Inverter • Motor driver Absolute Maximum Ratings TC = 25°C unless otherwise noted Item IGBT Diode Module Symbol VCES VGES IC ICM TSC Tj PD VRRM IF IFRM Tj PD Tstg Viso Mt W Conditions @Tj = 150 °C, TC = 25 °C, Continuous @Tj = 150 °C, TC = 45 °C, Continuous @TC = 45 °C, tP = 1 ms Chip Level, @Tj = 150 °C, VGE = 15 V, VCES < 600 V Operating Junction Temperature *(1) @Tj = 150 °C, TC = 25 °C @Tj = 150 °C, TC = 80 °C @TC = 25 °C @TC = 80 °C @TC = 80 °C, tP = 1 ms Operating Junction Temperature *(1) @TC = 25
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