LEF100G602
LEF100G602 is IGBT manufactured by LSIS.
Features
- Non punch through (NPT) technology
- Ultra-fast
- 10μs Short circuit current
- Positive VCE(on) temperature coefficient
- Free wheeling diodes with fast and soft reverse recovery
SISPM™
600V 100A 4-Pack IGBT Module
Target data
Applications
- Power supply
- UPS / Inverter
- Motor driver
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Item IGBT
Diode Module
Symbol VCES VGES
ICM TSC Tj
VRRM
IFRM Tj
Tstg Viso Mt W
Conditions
@Tj = 150 °C, TC = 25 °C, Continuous @Tj = 150 °C, TC = 45 °C, Continuous @TC = 45 °C, t P = 1 ms Chip Level, @Tj = 150 °C, VGE = 15 V, VCES < 600 V Operating Junction Temperature
- (1) @Tj = 150 °C, TC = 25 °C @Tj = 150 °C, TC = 80 °C
@TC = 25 °C @TC = 80 °C @TC = 80 °C, t P = 1 ms Operating Junction Temperature
- (1) @TC = 25 °C @TC = 80 °C Storage Temperature @AC 1minute Main Terminal Mounting torque (M4) Weight
Internal Circuit & Pin Description
Pin Number 1~6, 29~34 7~9, 26~28...
