Datasheet4U Logo Datasheet4U.com

LVH150G602Z - IGBT

Download the LVH150G602Z datasheet PDF. This datasheet also covers the LVH150G602 variant, as both devices belong to the same igbt family and are provided as variant models within a single manufacturer datasheet.

Description

Pin Number 1 2 3 4

Features

  • Non punch through (NPT) technology - Ultra-fast - 10μs Short circuit current - Positive VCE(on) temperature coefficient.
  • Free wheeling diodes with fast and soft reverse recovery.
  • Industrial standard package with copper base plate.
  • Included ESD protection function.
  • (1).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (LVH150G602-LSIS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number LVH150G602Z
Manufacturer LSIS
File Size 681.62 KB
Description IGBT
Datasheet download datasheet LVH150G602Z Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
LVH Sealed Power Inductors Chilisin Electronics
LVH201B10H Sealed Power Inductors Chilisin Electronics
LVH252010H Sealed Power Inductors Chilisin Electronics
LVH252012 Sealed Power Inductors Chilisin Electronics
LVH252012H Sealed Power Inductors Chilisin Electronics

Other Datasheets by LSIS

Part Number Description
LVH150G602 IGBT
LVH150G1201 IGBT
LVH150G1201Z IGBT
LVH150G1202 IGBT
LVH150G1202Z IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
LVH150G602 LVH150G602Z*(1) SUSPM™ 600V 150A 2-Pack IGBT Module Features • Non punch through (NPT) technology - Ultra-fast - 10μs Short circuit current - Positive VCE(on) temperature coefficient • Free wheeling diodes with fast and soft reverse recovery • Industrial standard package with copper base plate • Included ESD protection function *(1) Applications • Welder / Power supply • UPS / Inverter • Industrial motor driver Absolute Maximum Ratings TC = 25°C unless otherwise noted Item IGBT Diode Module Symbol VCES VGES IC ICM TSC Tj PD VRRM IF IFRM Tj Tstg Viso Mt MS W Conditions @ Tj = 150 °C, Chip level @ tP = 1ms Chip Level, @ Tj = 150 °C, VGE = 15 V, VCES < 600 V Operating Junction Temperature *(2) @Tj = 150 °C, TC = 25 °C @Tj = 150 °C, TC = 80 °C tP = 1 ms Operating Junction Temp
Published: |