DESCRIPTION
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. Pin1–Gate Pin2–Drain Pin3–Source ABSOLUTE MAXIMUM RATINGS
Parameter Max. Units ID@TC=25 ْC Continuous Drain Current, VGS@10V ID@TC=100ْC Continuous Drain Current, VGS@10V IDM Pulsed Drain Current Linear Derating Factor VGS EAS IAR EAR dv/dt TJ TSTG Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current ① ① ③ ② ① 18 11 72 125 1.0 ±20 580 18 13 5.0 –55 to +150 300(1.6mm from case) 10 Ibf●in(1.1N●m) Min. Typ. Max. Units A W W/ ْC V mJ A mJ V/ns ْC PD@TC=25ْC Power Dissipation Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque,6-32 or M3 screw Thermal Resistance Parameter RθJC RθCS RθJA Junction-to-case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient — — — — 0.50 —...
LTO-DMS
