LUP12N65 Description
These enhancement mode power filed effect transistors havebeen advanced technology design to provide low on-state resistance, high avalanche energy. These devices are well suited for popular AC-DC applications, active power factor correction, ballasts based on half-bridge topology.
LUP12N65 Key Features
- Low On-state Resistance
- Fast Switching
- Low Gate Charge
- Fully Characterized Avalanche Voltage and Current