Download the FX816D datasheet PDF.
This datasheet also covers the FX816A variant, as both devices belong to the same photo transistor coupler family and are provided as variant models within a single manufacturer datasheet.
General Description
The FX816 series combine an AlGaAs infrared emitting diode as the emitter which is optically coupled to a silicon planar phototransistor detector in a plastic DIP4 package with different lead forming options.
Full PDF Text Transcription for FX816D (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
FX816D. For precise diagrams, tables, and layout, please refer to the original PDF.
www.lyg-semi.com FX816 Series DIP4, DC Input, Photo Transistor Coupler Description The FX816 series combine an AlGaAs infrared emitting diode as the emitter which is opti...
View more extracted text
combine an AlGaAs infrared emitting diode as the emitter which is optically coupled to a silicon planar phototransistor detector in a plastic DIP4 package with different lead forming options. With the robust coplanar double mold structure, FX816 series provide the most stable isolation feature. Features ⚫ High isolation 5000 VRMS ⚫ CTR flexibility available see order information ⚫ DC input with transistor output ⚫ Operating temperature range - 55 °C to 110 °C ⚫ Copper Leadframe ⚫ REACH Compliance ⚫ MSL class 1 ⚫ Halogen free (Optional) ⚫ Regulatory Approval ◼ VDE - EN60747-5-5(VDE0884-5) ◼ CQC - GB4943.
FX816D Datasheet
