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3CA1185 - SILICON PNP TRANSISTOR

Key Features

  • Low VCE(sat),complementary pair with 2SD1762(3DA1762). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -60 V VCEO -50 V VEBO -5.0 V IC -3.0 A ICP -4.5 A PC 2.0 W PC(TC=25℃) 25 W Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol VCBO VCEO VEBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob Test condition IC=-50μA IE=0 IC=-1.0mA IB=0 IE=-50μA IC=0 VCB=-40V IE=0 VEB=-4.0V IC=0 VCE=-3.0V IC=-0.5A IC=-2.0A IB=-0.2A IC=-2.0A IB=-0.2A VCE.

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Datasheet Details

Part number 3CA1185
Manufacturer LZG
File Size 468.03 KB
Description SILICON PNP TRANSISTOR
Datasheet download datasheet 3CA1185 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SB1185(3CA1185) PNP /SILICON PNP TRANSISTOR :。/Purpose: Power amplifier applications. :VCE(sat)， 2SD1762(3DA1762)。 Features: Low VCE(sat),complementary pair with 2SD1762(3DA1762). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -60 V VCEO -50 V VEBO -5.0 V IC -3.0 A ICP -4.5 A PC 2.0 W PC(TC=25℃) 25 W Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol VCBO VCEO VEBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob Test condition IC=-50μA IE=0 IC=-1.0mA IB=0 IE=-50μA IC=0 VCB=-40V IE=0 VEB=-4.0V IC=0 VCE=-3.0V IC=-0.5A IC=-2.0A IB=-0.2A IC=-2.0A IB=-0.2A VCE=-5.0V IC=-0.5A f=30MHz VCB=-10V IE=0 f=1.0MHz Min -60 -50 -5.0 60 Rating Typ 70 50 Max -1.0 -1.0 320 -1.0 -1.