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3CG1020 - SILICON PNP TRANSISTOR

Key Features

  • Low collector saturation voltage high speed switching time, complementary pair with 2SC2655(3DG2655). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO VCEO VEBO IC PC Tj Tstg -50 -50 -5.0 -2.0 900 150 -55～150 V V V A mW ℃ ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition Rating Max Unit Min Typ VCEO ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) fT Cob tf ton tstg IC=-10mA VCB=-50V VEB=-5.0V VCE=-2.0V VCE=-2.0V IC=-1.0A IC=-1.0A VCE=-2.0V VCB=-10V () () () I.

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Datasheet Details

Part number 3CG1020
Manufacturer LZG
File Size 231.28 KB
Description SILICON PNP TRANSISTOR
Datasheet download datasheet 3CG1020 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SA1020(3CG1020) PNP /SILICON PNP TRANSISTOR :,/Purpose: Power amplifier and switching applications. :,, 2SC2655(3DG2655)/Features: Low collector saturation voltage high speed switching time, complementary pair with 2SC2655(3DG2655). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO VCEO VEBO IC PC Tj Tstg -50 -50 -5.0 -2.0 900 150 -55～150 V V V A mW ℃ ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition Rating Max Unit Min Typ VCEO ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) fT Cob tf ton tstg IC=-10mA VCB=-50V VEB=-5.0V VCE=-2.0V VCE=-2.0V IC=-1.0A IC=-1.0A VCE=-2.0V VCB=-10V () () () IB=0 IE=0 IC=0 IC=-0.5A IC=-1.5A IB=-0.05A IB=-0.05A IC=-0.5A IE=0 f=1.0MHz -50 -1.0 -1.0 240 -0.5 -1.2 50 100 40 0.1 0.1 1.