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3CG1426 - SILICON PNP TRANSISTOR

Features

  • Low saturation voltage. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -20 V VCEO -20 V VEBO -6.0 V IC -3.0 A PC 750 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol VCBO VCEO VEBO ICBO IEBO hFE VCE(sat) fT Cob Test condition IC=-50μA IE=0 IC=-1.0mA IB=0 IE=-10μA IC=0 VCB=-20V IE=0 VEB=-5.0V IC=0 VCE=-2.0V IC=-100mA IC=-2.0A IB=-0.1A VCE=-2.0V IC=-500mA f=100MHz VCB=-10V IE=0 f=1.0MHz Min -20 -20 -6.0 82 Rating Typ 2.

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Datasheet Details

Part number 3CG1426
Manufacturer LZG
File Size 175.18 KB
Description SILICON PNP TRANSISTOR
Datasheet download datasheet 3CG1426 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SB1426(3CG1426) PNP /SILICON PNP TRANSISTOR ：。/Features: Low saturation voltage. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -20 V VCEO -20 V VEBO -6.0 V IC -3.0 A PC 750 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol VCBO VCEO VEBO ICBO IEBO hFE VCE(sat) fT Cob Test condition IC=-50μA IE=0 IC=-1.0mA IB=0 IE=-10μA IC=0 VCB=-20V IE=0 VEB=-5.0V IC=0 VCE=-2.0V IC=-100mA IC=-2.0A IB=-0.1A VCE=-2.0V IC=-500mA f=100MHz VCB=-10V IE=0 f=1.0MHz Min -20 -20 -6.0 82 Rating Typ 240 35 Max -0.1 -0.1 390 -0.5 Unit V V V μA μA V MHz pF hFE /hFE classifications: P:82～180 Q:120～270 R:180～390 http://www.lzg.so 2SB1426(3CG1426) http://www.lzg.
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