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3CG1590K - SILICON PNP TRANSISTOR

Features

  • Low VCE(sat),large current, complementary to 2SD2444K(3DG2444K). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -15 V VCEO -15 V VEBO -6.0 V IC -1.0 A ICM -3.0 A PC 200 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition VCBO VCEO VEBO ICBO IEBO hFE(1) hFE(2) VCE(sat) fT Cob IC=-50μA IC=-1.0mA IE=-50μA VCB=-12V IE=0 VEB=-5.0V IC=0 VCE=-2.0V IC=-0.5A VCE=-2.0V IC=-800mA IC=-0.4A IB=-20mA VCE=-2.0V IE=50mA f=1.

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Datasheet Details

Part number 3CG1590K
Manufacturer LZG
File Size 232.37 KB
Description SILICON PNP TRANSISTOR
Datasheet download datasheet 3CG1590K Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SB1590K(3CG1590K) PNP /SILICON PNP TRANSISTOR :。 Purpose: General power amplifier applications. : ,， 2SD2444K(3DG2444K)。 Features: Low VCE(sat),large current, complementary to 2SD2444K(3DG2444K). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -15 V VCEO -15 V VEBO -6.0 V IC -1.0 A ICM -3.0 A PC 200 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition VCBO VCEO VEBO ICBO IEBO hFE(1) hFE(2) VCE(sat) fT Cob IC=-50μA IC=-1.0mA IE=-50μA VCB=-12V IE=0 VEB=-5.0V IC=0 VCE=-2.0V IC=-0.5A VCE=-2.0V IC=-800mA IC=-0.4A IB=-20mA VCE=-2.0V IE=50mA f=100MHz VCB=-10V IE=0A f=1.0MHz Min -15 -15 -6.0 120 80 Rating Typ 200 15 Max -0.5 -0.5 270 -0.
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