3CG1955 - SILICON PNP TRANSISTOR

Product Overview

LZG

Part number	3CG1955
Manufacturer	LZG
File Size	215.59 KB
Description	SILICON PNP TRANSISTOR
Datasheet	3CG1955 Datasheet
Additional preview pages of the 3CG1955 datasheet.

Low saturation voltage, large collector current. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -15 V VCEO -12 V VEBO -5.0 V IC -400 mA IB -50 mA PC 100 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition ICBO IEBO hFE VCE(sat)(1) VCE(sat)(2) VBE(sat) fT Cob Ron VCB=-15V VEB=-5.0V VCE=-2.0V IC=-10mA IC=-200mA IC=-200mA VCE=-2.0V VCB=-10V IE=0 IE=0 IC=0 IC=-10mA IB=-0.5mA IB=-10mA IB=-10mA IC=-10mA f=1.0MHz IB=-1.0mA V.

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Published: Jul 14, 2017 |