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3CG1955 - SILICON PNP TRANSISTOR

Key Features

  • Low saturation voltage, large collector current. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -15 V VCEO -12 V VEBO -5.0 V IC -400 mA IB -50 mA PC 100 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition ICBO IEBO hFE VCE(sat)(1) VCE(sat)(2) VBE(sat) fT Cob Ron VCB=-15V VEB=-5.0V VCE=-2.0V IC=-10mA IC=-200mA IC=-200mA VCE=-2.0V VCB=-10V IE=0 IE=0 IC=0 IC=-10mA IB=-0.5mA IB=-10mA IB=-10mA IC=-10mA f=1.0MHz IB=-1.0mA V.

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Datasheet Details

Part number 3CG1955
Manufacturer LZG
File Size 215.59 KB
Description SILICON PNP TRANSISTOR
Datasheet download datasheet 3CG1955 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SA1955(3CG1955) PNP /SILICON PNP TRANSISTOR :。 Purpose: General purpose amplifier and muting switch application . ：,。 Features: Low saturation voltage, large collector current. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -15 V VCEO -12 V VEBO -5.0 V IC -400 mA IB -50 mA PC 100 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition ICBO IEBO hFE VCE(sat)(1) VCE(sat)(2) VBE(sat) fT Cob Ron VCB=-15V VEB=-5.0V VCE=-2.0V IC=-10mA IC=-200mA IC=-200mA VCE=-2.0V VCB=-10V IE=0 IE=0 IC=0 IC=-10mA IB=-0.5mA IB=-10mA IB=-10mA IC=-10mA f=1.0MHz IB=-1.0mA Vin=-1.0Vrms f=1KHZ ton Tstg IB1=-IB2=5.