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3CG2048 - SILICON PNP TRANSISTOR

Features

  • High speed switching, low saturation voltage, complements the 2SC5730(3DG5730). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -30 V VCEO -30 V VEBO -6.0 V IC -1.0 A ICP -2.0 A PC 500 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol VCBO VCEO VEBO ICBO IEBO hFE VCE(sat) fT Cob ton toff tstg Test condition IC=-100μA IE=0 IC=-1.0mA IB=0 IE=-100μA IC=0 VCB=-20V IE=0 VEB=-4.0V IC=0 VCE=-2.0V IC=-100mA IC=-500mA IB=-50mA VCE=.

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Datasheet Details

Part number 3CG2048
Manufacturer LZG
File Size 172.04 KB
Description SILICON PNP TRANSISTOR
Datasheet download datasheet 3CG2048 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SA2048(3CG2048) PNP /SILICON PNP RANSISTOR :,。 Purpose: Small signal low frequency amplifier, high speed switching. ：，， 2SC5730(3DG5730)。 Features: High speed switching, low saturation voltage, complements the 2SC5730(3DG5730). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -30 V VCEO -30 V VEBO -6.0 V IC -1.0 A ICP -2.0 A PC 500 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol VCBO VCEO VEBO ICBO IEBO hFE VCE(sat) fT Cob ton toff tstg Test condition IC=-100μA IE=0 IC=-1.0mA IB=0 IE=-100μA IC=0 VCB=-20V IE=0 VEB=-4.0V IC=0 VCE=-2.0V IC=-100mA IC=-500mA IB=-50mA VCE=-10V IC=-100mA f=10MHz VCB=-10V IE=0 f=1.0MHz Min -30 -30 -6.0 120 IC=-1.
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