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3CG624 - SILICON PNP TRANSISTOR

Key Features

  • High hFE, complementary pair with 2SD596(3DG596M). /Absolute Maximum Ratings(Ta=25℃) Symbol Rating Unit VCBO -30 V VCEO -25 V VEBO -5.0 V IC -700 mA PC 200 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical Characteristics(Ta=25℃) Symbol ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE fT Cob Test Condition VCB=-30V VEB=-5.0V VCE=-1.0V VCE=-1.0V IC=-700mA VCE=-6.0V VCE=-6.0V VCB=-6.0V IE=0 IC=0 IC=-100mA IC=-700mA IB=-70mA IC=-10mA IE=10mA IE=0 f=10MHz Min 110 50 -0.6 Rating Typ 200 -0.

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Datasheet Details

Part number 3CG624
Manufacturer LZG
File Size 299.90 KB
Description SILICON PNP TRANSISTOR
Datasheet download datasheet 3CG624 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SB624(3CG624) PNP /SILICON PNP TRANSISTOR :。 Purpose: Audio frequency amplifier application . : hFE, 2SD596(3DG596M)。 Features: High hFE, complementary pair with 2SD596(3DG596M). /Absolute Maximum Ratings(Ta=25℃) Symbol Rating Unit VCBO -30 V VCEO -25 V VEBO -5.0 V IC -700 mA PC 200 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical Characteristics(Ta=25℃) Symbol ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE fT Cob Test Condition VCB=-30V VEB=-5.0V VCE=-1.0V VCE=-1.0V IC=-700mA VCE=-6.0V VCE=-6.0V VCB=-6.0V IE=0 IC=0 IC=-100mA IC=-700mA IB=-70mA IC=-10mA IE=10mA IE=0 f=10MHz Min 110 50 -0.6 Rating Typ 200 -0.25 -0.64 160 17 Max -0.1 -0.1 400 -0.6 -0.