3CG739 - SILICON PNP TRANSISTOR

LZG

Key Features

Complementary pair with 2SD788(3DG788). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -20 V VCEO -20 V VEBO -6.0 V IC -2.0 A PC 0.9 W Tj 150 ℃ Tstg -55～150 ℃ /Electrical Characteristics(Ta=25℃) Symbol Test condition VCBO VCEO VEBO ICBO IEBO hFE VCE(sat) fT Cob IC=-10μA IC=-1.0mA IE=-10μA VCB=-16V VEB=-6.0V VCE=-2.0V IC=-1.0A VCE=-2.0V VCB=-10V IE=0 RBE=∞ IC=0 IE=0 IC=0 IC=-0.1A IB=-0.1A IC=-10mA IE=0 f=1.0MHz Min -20 -20 -6.0 100 Rating Typ 150 50.

3CG739 silicon pnp transistor by LZG - Datasheet Preview

Datasheet Details

Part number	3CG739
Manufacturer	LZG
File Size	247.71 KB
Description	SILICON PNP TRANSISTOR
Datasheet	3CG739 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SB739(3CG739) PNP /SILICON PNP TRANSISTOR :。 Purpose: Low frequency power amplifier. : 2SD788(3DG788)。 Features: Complementary pair with 2SD788(3DG788). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -20 V VCEO -20 V VEBO -6.0 V IC -2.0 A PC 0.9 W Tj 150 ℃ Tstg -55～150 ℃ /Electrical Characteristics(Ta=25℃) Symbol Test condition VCBO VCEO VEBO ICBO IEBO hFE VCE(sat) fT Cob IC=-10μA IC=-1.0mA IE=-10μA VCB=-16V VEB=-6.0V VCE=-2.0V IC=-1.0A VCE=-2.0V VCB=-10V IE=0 RBE=∞ IC=0 IE=0 IC=0 IC=-0.1A IB=-0.1A IC=-10mA IE=0 f=1.0MHz Min -20 -20 -6.0 100 Rating Typ 150 50 Max -2.0 -0.2 320 -0.3 Unit V V V μA μA V MHz pF hFE /hFE classifications: B:100～200 C:160～320 http://www.lzg.so 2SB739(3CG739) http://www.lzg.