3CG844 - SILICON PNP TRANSISTOR

LZG

Key Features

Excellent hFE Linearity. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -55 V VCEO -55 V VEBO -5.0 V IC -100 mA IE 100 mA PC 300 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition VCBO VCEO VEBO ICBO IEBO hFE VCE(sat) VBE fT Cob IC=-10μA IC=-1.0mA IE=-10μA VCB=-18V VEB=-2.0V VCE=-12V IC=-10mA VCE=-12V VCE=-12V VCB=-10V IE=0 IB=0 IC=0 IE=0 IC=0 IC=-2.0mA IB=-1.0mA IC=-2.0mA IC=-2.0mA IE=0 f=1.0MHz Min -55 -55 -5.0 160.

3CG844 silicon pnp transistor by LZG - Datasheet Preview

Datasheet Details

Part number	3CG844
Manufacturer	LZG
File Size	95.97 KB
Description	SILICON PNP TRANSISTOR
Datasheet	3CG844 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SA844(3CG844) PNP /SILICON PNP TRANSISTOR :/Purpose: Low frequency amplifier applications. :/Features: Excellent hFE Linearity. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -55 V VCEO -55 V VEBO -5.0 V IC -100 mA IE 100 mA PC 300 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition VCBO VCEO VEBO ICBO IEBO hFE VCE(sat) VBE fT Cob IC=-10μA IC=-1.0mA IE=-10μA VCB=-18V VEB=-2.0V VCE=-12V IC=-10mA VCE=-12V VCE=-12V VCB=-10V IE=0 IB=0 IC=0 IE=0 IC=0 IC=-2.0mA IB=-1.0mA IC=-2.0mA IC=-2.0mA IE=0 f=1.0MHz Min -55 -55 -5.0 160 Rating Typ -0.1 -0.66 200 2.0 Max -0.1 -0.05 800 -0.5 -0.75 Unit V V V μA μA V V MHz pF hFE /hFE classifications: C:160～320 D:250～500 E:400～800 2SA844(3CG844) http://www.lzg.