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3CG893 - SILICON PNP TRANSISTOR

Key Features

  • Low saturation voltage,large current capacity and wide ASO. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO VCEO VEBO IC IC(Pulse) PC Tj Tstg -20 -10 -7.0 -2.5 -5.0 750 150 -55～150 V V V A A mW ℃ ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition VCBO VCEO VEBO ICBO IEBO hFE(1).
  • hFE(2) VCE(sat) fT Cob IC=-10μA IC=-1.0mA IE=-10μA VCB=-20V VEB=-4.0V VCE=-2.0V VCE=-2.0V IC=-1.5A VCE=-10V VCB=-10V.
  • :pulse test/。 IE=0 RBE=∞ IC=0 IE=0 IC=0 IC=-500mA IC.

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Datasheet Details

Part number 3CG893
Manufacturer LZG
File Size 213.19 KB
Description SILICON PNP TRANSISTOR
Datasheet download datasheet 3CG893 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SB893(3CG893) PNP /SILICON PNP TRANSISTOR ：,,，。 Purpose: Power supplies, relay drivers, lamp drivers, strobes. ：,,。 Features: Low saturation voltage,large current capacity and wide ASO. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO VCEO VEBO IC IC(Pulse) PC Tj Tstg -20 -10 -7.0 -2.5 -5.0 750 150 -55～150 V V V A A mW ℃ ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition VCBO VCEO VEBO ICBO IEBO hFE(1) *hFE(2) VCE(sat) fT Cob IC=-10μA IC=-1.0mA IE=-10μA VCB=-20V VEB=-4.0V VCE=-2.0V VCE=-2.0V IC=-1.5A VCE=-10V VCB=-10V *:pulse test/。 IE=0 RBE=∞ IC=0 IE=0 IC=0 IC=-500mA IC=-3A IB=-150mA IC=-50mA f=1.0MHz Min -20 -10 -7.0 100 70 Rating Typ -0.25 250 70 Max -1.0 -1.