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3CG952 - SILICON PNP TRANSISTOR

Key Features

  • High total dissipation, high hFE and low V . CE(sat) /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -30 V VCEO -25 V VEBO -5.0 V IC -700 mA IB -150 mA PC 600 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) VBE fT Cob VCB=-30V IE=0 VEB=-5.0V IC=0 VCE=-1.0V IC=-100mA VCE=-1.0V IC=-700mA IC=-700mA IB=-70mA IC=-700mA IB=-70mA VCE=-6.0V IC=-10mA VCE=-6.0V IC=-10mA VC.

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Datasheet Details

Part number 3CG952
Manufacturer LZG
File Size 254.76 KB
Description SILICON PNP TRANSISTOR
Datasheet download datasheet 3CG952 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SA952(3CG952) PNP /SILICON PNP TRANSISTOR :、/Purpose: Output stage of portable radio and cassette type tape recorder, general purpose applications. :,hFE ,VCE(sat)/Features: High total dissipation, high hFE and low V .CE(sat) /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -30 V VCEO -25 V VEBO -5.0 V IC -700 mA IB -150 mA PC 600 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) VBE fT Cob VCB=-30V IE=0 VEB=-5.0V IC=0 VCE=-1.0V IC=-100mA VCE=-1.0V IC=-700mA IC=-700mA IB=-70mA IC=-700mA IB=-70mA VCE=-6.0V IC=-10mA VCE=-6.0V IC=-10mA VCB=-6.0V IE=0 f=1.0MHz Min 90 50 -0.60 50 Rating Typ -0.25 -0.95 -0.64 160 17 Max -0.1 -0.