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3DD13003F6 - SILICON NPN TRANSISTOR

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Part number 3DD13003F6
Manufacturer LZG
File Size 198.18 KB
Description SILICON NPN TRANSISTOR
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MJE13003F6(3DD13003F6) NPN /SILICON NPN TRANSISTOR :、、。 Purpose: High frequency electronic lighting ballast applications，converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO 600 V VCEO 400 V VEBO 9.0 V IC 0.5 A PC(Ta=25℃) 1.25 W PC(TC=25℃) 20 W Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition VCBO VCEO VEBO ICBO ICEO IEBO hFE VCE(sat) VBE(sat) fT tf tS IC=1mA IC=10mA IE=1mA VCB=600V VCE=400V VEB=9.0V VCE=5.0V IC=200mA IC=200mA VCE=10V IC=50mA VCE=5V (UI9600) IE=0 IB=0 IC=0 IE=0 IB=0 IC=0 IC=200mA IB=40mA IB=40mA f=1.0MHz IC=100mA Min 600 400 9.0 10 5.0 Rating Typ Max 0.1 0.1 0.1 40 0.5 1.2 0.6 4.
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