• Part: 3DD13003F6
  • Description: SILICON NPN TRANSISTOR
  • Category: Transistor
  • Manufacturer: LZG
  • Size: 198.18 KB
Download 3DD13003F6 Datasheet PDF
LZG
3DD13003F6
3DD13003F6 is SILICON NPN TRANSISTOR manufactured by LZG.
MJE13003F6(3DD13003F6) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit VCBO VCEO VEBO PC(Ta=25℃) PC(TC=25℃) Tj ℃ Tstg -55~150 ℃ 电性能参数/Electrical characteristics(Ta=25℃) 参数符号 Symbol 测试条件 Test condition VCBO VCEO VEBO ICBO ICEO IEBO h FE VCE(sat) VBE(sat) f T tf t S IC=1m A IC=10m A IE=1m A VCB=600V VCE=400V VEB=9.0V VCE=5.0V IC=200m A IC=200m A VCE=10V IC=50m A VCE=5V (UI9600) IE=0 IB=0 IC=0 IE=0 IB=0 IC=0 IC=200m A IB=40m A IB=40m A f=1.0MHz IC=100m A 最小值 Min 600 400...