3DG1008 - SILICON NPN TRANSISTOR

LZG

General Description

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.

Figure 1.

(1) Typical RθJA = 41°C/W on a 1-inch2 , 2-oz.

Key Features

Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb Free Terminal Plating RoHS Compliant Halogen Free SON 5-mm × 6-mm Plastic Package.

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3DG1008 silicon npn transistor by LZG - Datasheet Preview

Datasheet Details

Part number	3DG1008
Manufacturer	LZG
File Size	200.99 KB
Description	SILICON NPN TRANSISTOR
Datasheet	3DG1008 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CSD18504Q5A www.ti.com SLPS366 – JUNE 2012 40V N-Channel NexFET™ Power MOSFETs Check for Samples: CSD18504Q5A 1 FEATURES Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb Free Terminal Plating RoHS Compliant Halogen Free SON 5-mm × 6-mm Plastic Package PRODUCT SUMMARY Typical Values at 25ºC unless otherwise stated VDS Qg Qgd RDS(on) VGS(th) Drain to Source Voltage Gate Charge Total (4.5V) Gate Charge Gate to Drain Drain to Source On Resistance Threshold Voltage TYPICAL VALUE 40 7.7 2.4 VGS = 4.5V VGS = 10V 1.9 7.5 5.