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2SD400(3DG400)
NPN /SILICON NPN TRANSISTOR
:。
Purpose: Low frequency power amplifier, electronic governor applications.
/Absolute Maximum Ratings(Ta=25℃)
Symbol Rating Unit
VCBO VCEO VEBO IC ICP PC Tj Tstg
25 25 5.0 1.0 2.0 900 150 -55～150
V V V A A mW ℃ ℃
/Electrical Characteristics(Ta=25℃)
Symbol
Test Condition
Rating
Max Unit
Min
Typ
VCBO VCEO VEBO ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) fT Cob
IC=10μA IC=1.0mA IE=10μA VCB=20V VEB=4.0V VCE=2.0V VCE=2.0V IC=500mA IC=500mA VCE=10V VCB=10V IE=0
IE=0 IB=0 IC=0 IE=0 IC=0 IC=50mA IC=1.0A IB=50mA IB=50mA IC=50mA f=1.0MHz
25 25 5.0 1.0 1.0 60 30 0.1 0.85 180 15 F:160～320 0.3 1.2 560
V V V μA μA
V V MHz pF
hFE(1)/hFE(1) Classifications: D:60～120
E:100～200
G:280～560
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3DG400 Datasheet
