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3RA2114 - SILICON PNP DIGITAL TRANSISTOR

Features

  • With built-in bias resistors, simplify circuit design, reduce a quantity of parts and manufacturing process. /Absolute Maximum Ratings(Ta=25℃) Symbol Rating Unit VCBO -50 V VCEO -50 V IC -100 mA PC 200 mW Tj 150 ℃ Tstg -55~150 ℃ /Electrical Characteristics(Ta=25℃) Symbol Test Condition VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL fT R1 IC=-10μA IE=0 IC=-2.0mA IB=0 VCB=-50V IE=0 VCE=-50V IB=0 VEB=-6.0V IC=0 VCE=-10V IC=-5.0mA IC=-10mA IB=-0.3mA VCC=-5.0V VB.

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Datasheet Details

Part number 3RA2114
Manufacturer LZG
File Size 217.18 KB
Description SILICON PNP DIGITAL TRANSISTOR
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Full PDF Text Transcription

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UN2114(3RA2114) PNP /SILICON PNP DIGITA TRANSISTOR :、、。 Purpose: Switching, inverter circuit, interface circuit and driver circuit applications. :,,。 Features: With built-in bias resistors, simplify circuit design, reduce a quantity of parts and manufacturing process. /Absolute Maximum Ratings(Ta=25℃) Symbol Rating Unit VCBO -50 V VCEO -50 V IC -100 mA PC 200 mW Tj 150 ℃ Tstg -55~150 ℃ /Electrical Characteristics(Ta=25℃) Symbol Test Condition VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL fT R1 IC=-10μA IE=0 IC=-2.0mA IB=0 VCB=-50V IE=0 VCE=-50V IB=0 VEB=-6.0V IC=0 VCE=-10V IC=-5.0mA IC=-10mA IB=-0.3mA VCC=-5.0V VB=-0.5V RL=1KΩ VCC=-5.0V VB=-2.5V RL=1KΩ VCB=-10V IE=2.
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