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BLD123D
NPN /SILICON NPN TRANSISTOR
: 、、。
Purpose: High frequency electronic lighting ballast applications，converters, inverters,
switching regulators, etc. /Absolute maximum ratings(Ta=25℃)
Symbol Rating Unit
VCBO VCEO VEBO IC PC(Ta=25℃) Tj Tsag
600 400 9.0 1.75 1.0 150 -55～150
V V V A W ℃ ℃
/Electrical characteristics(Ta=25℃)
Symbol
Test condition
Rating
Max Unit
Min
Typ
VCBO VCEO VEBO ICBO ICEO IEBO hFE(1) hFE(2) hFE(3) VCE(sat)(1) VCE(sat)(2) VCE(sat)(3) VBE(sat) tf ts fT
IC=1mA IC=10mA IE=1mA VCB=600V VCE=400V VEB=9.0V VCE=5V VCE=5V VCE=5V IC=500mA IC=200mA IC=1.5A IC=500mA VCE=5V (UI9600) VCE=10V IC=0.1A
IE=0 IB=0 IC=0 IE=0 IB=0 IC=0 IC=200mA IC=1mA IC=1.5A Ib=100mA Ib=20mA Ib=500mA Ib=100mA IC=0.25A f=1MHz http://www.lzg.so
600 400 9.0 0.1 0.1 0.
BLD123D Datasheet
