Datasheet Details
| Part number | KSC1008 |
|---|---|
| Manufacturer | LZG |
| File Size | 200.99 KB |
| Description | SILICON NPN TRANSISTOR |
| Datasheet | KSC1008-LZG.pdf |
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Overview: CSD18504KCS www.ti.com SLPS365 – OCTOBER 2012 40-V, N-Channel NexFET™ Power MOSFETs Check for Samples:.
| Part number | KSC1008 |
|---|---|
| Manufacturer | LZG |
| File Size | 200.99 KB |
| Description | SILICON NPN TRANSISTOR |
| Datasheet | KSC1008-LZG.pdf |
|
|
|
The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.
(1) Pulse duration ≤300μs, duty cycle ≤2% 20 RDS(on) - On-State Resistance (mΩ) 18 16 14 12 10 8 6 4 2 0 0 2 4 RDS(on) vs VGS VGS - Gate-to-Source Voltage (V) TC = 25°C Id = 40A TC = 125ºC Id = 40A GATE CHARGE 10 9 8 7 6 5 4 3 2 1 0 0 4 8 12 Qg - Gate Charge (nC) 16 20 G001 ID = 40A VDS = 20V 6 8 10 12 14 16 VGS - Gate-to- Source Voltage (V) 18 20 G001 1 2 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
NexFET is a trademark of Texas Instruments.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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KSC1008 | NPN Epitaxial Silicon Transistor | Samsung semiconductor |
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KSC1008 | NPN Epitaxial Silicon Transistor | Fairchild Semiconductor |
| Part Number | Description |
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