GAL16V8 Overview
The GAL16V8, at 3.5 ns maximum propagation delay time, bines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest speed performance available in the PLD market. High speed erase times (<100ms) allow the devices to be reprogrammed quickly and efficiently. The generic architecture provides maximum design flexibility by allowing the Output Logic Macrocell...
GAL16V8 Key Features
- HIGH PERFORMANCE E2CMOS® TECHNOLOGY
- 3.5 ns Maximum Propagation Delay
- Fmax = 250 MHz
- 3.0 ns Maximum from Clock Input to Data Output
- UltraMOS® Advanced CMOS Technology
- 50% to 75% REDUCTION IN POWER FROM BIPOLAR
- 75mA Typ Icc on Low Power Device
- 45mA Typ Icc on Quarter Power Device
- ACTIVE PULL-UPS ON ALL PINS
- E2 CELL TECHNOLOGY
