• Part: GAL18V10
  • Manufacturer: Lattice Semiconductor
  • Size: 265.88 KB
Download GAL18V10 Datasheet PDF
GAL18V10 page 2
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GAL18V10 page 3
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GAL18V10 Key Features

  • HIGH PERFORMANCE E2CMOS® TECHNOLOGY
  • 7.5 ns Maximum Propagation Delay
  • Fmax = 111 MHz
  • 5.5 ns Maximum from Clock Input to Data Output
  • TTL patible 16 mA Outputs
  • UltraMOS® Advanced CMOS Technology
  • LOW POWER CMOS
  • 75 mA Typical Icc
  • ACTIVE PULL-UPS ON ALL PINS
  • E2 CELL TECHNOLOGY

GAL18V10 Description

The GAL18V10, at 7.5 ns maximum propagation delay time, bines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide a very flexible 20-pin PLD. CMOS circuitry allows the GAL18V10 to consume much less power when pared to its bipolar counterparts. The E2 technology offers high speed (<100ms) erase times, providing the ability to reprogram or reconfigure the device quickly...