GAL20RA10 Description
The GAL20RA10 bines a high performance CMOS process with electrically erasable (E2) floating gate technology to provide the highest speed performance available in the PLD market. Lattice Semiconductor’s E2CMOS circuitry achieves power levels as low as 75mA typical ICC which represents a substantial savings in power when pared to bipolar counterparts. E2 technology offers high speed (<100ms) erase times providing the...
GAL20RA10 Key Features
- HIGH PERFORMANCE E2CMOS ® TECHNOLOGY
- 7.5 ns Maximum Propagation Delay
- Fmax = 83.3 MHz
- 9 ns Maximum from Clock Input to Data Output
- TTL patible 8 mA Outputs
- UltraMOS® Advanced CMOS Technology
- 50% to 75% REDUCTION IN POWER FROM BIPOLAR
- 75mA Typical Icc
- ACTIVE PULL-UPS ON ALL PINS
- E CELL TECHNOLOGY