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LESHAN RADIO COMPANY, LTD.
Monolithic Dual Switching Diode
BAV74LT1
3
1 ANODE 3 CATHODE 1 2 ANODE 2
CASE 318–08, STYLE 9 SOT–23 (TO–236AB)
DEVICE MARKING
BAV74LT1 = JA
MAXIMUM RATINGS (EACH DIODE)
Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR IF I FM(surge) Value 50 200 500 Unit Vdc mAdc mAdc
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board (1) T A = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) T A = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 556 300 2.
BAV74LT1 Datasheet
