Leshan Radio Company L2SA1036KRLT1G
Medium Power Transistor
| Part No. | L2SA1036KRLT1G |
|---|---|
| Datasheet | L2SA1036KRLT1G Download |
| Manufacturer |  Leshan Radio Company |
| Description | Medium Power Transistor |
| Buy | Stock & Price |
APPLICATIONS
Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 1 2 FStructure Epitaxial planar type PNP silicon transistor SOT– 23 3 FDEVICE MARKING 1) L2SA1036KQLT1G=HQ S- L2SA1036KQLT1G=HQ 2) L2SA1036KRLT1G=HR S-L2SA1036KRLT1G=HR 1 2 PNP FAbsolute maximum ratings (Ta = 25_C) FORDERING INFORMATION Device L2SA1036K*LT1G L2SA1036K*LT3G Package SOT-23 SOT-23 Shipping 3000/Tape & Reel 10000/Tape & Reel Rev.O 1/4 LESHAN RADIO COMPANY, LTD. L 2SA1036KQLT1G Series S-L2SA1036KQLT1G Series FElectrical characteristics (Ta = 25_C) Parameter Symbol Collector-base breakdown voltage BVCBO Collector-emitter breakdown voltage BVCEO Emitter-base breakdown voltage BVEBO Collector cutoff current ICBO Emitter cutoff current IEBO Collector-emitter saturation voltage VCE(sat) DC current transfer ration hFE Transition frequence fT Output capacitance Cob Min. — 40 — 32 —5 — — — 120 — — Typ. — — — — — — — 200 7 Max. — — — —1 —1 — 0.4 390 — — Unit V V V µA µA V — MHZ p...
