L2SA1037AKQLT1G
L2SA1037AKQLT1G is General Purpose Transistors manufactured by Leshan Radio Company.
Features z We declare that the material of product pliance with Ro HS requirements. z S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
L2SA1037AKQLT1G Series S-L2SA1037AKQLT1G Series
ORDERING INFORMATION
Device
L2SA1037AKQLT1G S-L2SA1037AKQLT1G L2SA1037AKQLT3G S-L2SA1037AKQLT3G
Package SOT23 SOT23
Shipping 3000/Tape & Reel 10000/Tape & Reel
1 2
SOT- 23
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector- Emitter Voltage Collector- Base Voltage
V CEO V CBO
- 50
- 60
Emitter- Base Voltage
V EBO
- 6.0
Collector Current
- Continuous Collector power dissipation Junction temperature Storage temperature
IC PC Tj T stg
- 150 m Adc
0.2 W
150 °C
-55 ~+150 °C
DEVICE MARKING
1 BASE
L2SA1037AKQLT1G =FQ L2SA1037AKSLT1G=G3F L2SA1037AKRLT1G=FR
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Collector- Emitter Breakdown Voltage (IC =
- 1 m A) Emitter- Base Breakdown Voltage (IE =
- 50 µA) Collector- Base Breakdown Voltage (IC =
- 50 µA) Collector Cutoff Current (VCB =
- 60 V) Emitter cutoff current (VEB...
