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LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
L2SA812QLT1G Series
FEATURE
ƽHigh Voltage: VCEO = -50 V. ƽEpitaxial planar type.
S-L2SA812QLT1G Series
ƽNPN complement: L2SC1623 ƽWe declare that the material of product compliance with RoHS requirements.
3
ƽS- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
L2SA812QLT3G Datasheet
