L2SA812QLT3G
L2SA812QLT3G is General Purpose Transistors manufactured by Leshan Radio Company.
LESHAN RADIO PANY, LTD.
General Purpose Transistors
L2SA812QLT1G Series
FEATURE
ƽHigh Voltage: VCEO = -50 V. ƽEpitaxial planar type.
S-L2SA812QLT1G Series
ƽNPN plement: L2SC1623 ƽWe declare that the material of product pliance with Ro HS requirements.
ƽS- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
L2SA812QLT1G S-L2SA812QLT1G
M8
L2SA812QLT3G S-L2SA812QLT3G
L2SA812RLT1G S-L2SA812RLT1G
L2SA812RLT3G S-L2SA812RLT3G
L2SA812SLT1G S-L2SA812SLT1G
L2SA812SLT3G S-L2SA812SLT3G
M8 M6
M6 M7 M7
MAXIMUM RATINGS
Shipping 3000/Tape&Reel 10000/Tape&Reel 3000/Tape&Reel 10000/Tape&Reel 3000/Tape&Reel 10000/Tape&Reel
SOT-23
1 BASE
3 COLLECTOR
2 EMITTER
Rating Collector-Emitter Voltage
Symbol VCEO
L2SA812 -50
Unit...
