Leshan Radio Company L2SA812SLT1G
General Purpose Transistors
| Part No. | L2SA812SLT1G |
|---|---|
| Datasheet | L2SA812SLT1G Download |
| Manufacturer |  Leshan Radio Company |
| Description | General Purpose Transistors |
| Buy | Stock & Price |
MAXIMUM RATINGS
3000/Tape&Reel Rating Symbol L2SA812 Unit Collector-Emitter Voltage VCEO -50 V Collector-Base Voltage VCBO -60 V Emitter-Base Voltage VEBO -6 V Collector current-continuoun IC THERMAL CHARATEERISTICS -150 mAdc Characteristic Total Device Dissipation FR-5 Board, (1) TA=25oC Derate above 25oC Thermal Resistance, Junction to Ambient Symbol PD R θJA Max 200 1.8 556 Total Device Dissipation Alumina Substrate, (2) TA=25 oC Derate above 25oC Thermal Resistance, Junction to Ambient Junction and Storage Temperature PD R θJA Tj ,Tstg 200 2.4 417 -55 to +150 L2SA812*LT1 3 1 2 SOT-23 1 BASE 3 COLLECTOR 2 EMITTER Unit mW mW/oC oC/W mW mW/oC oC/W oC L2SA812-1/5 LESHAN RADIO COMPANY, LTD. L2SA812*LT1ELECTRICAL CHARACTERISTICS
(TA=25oC unless otherwise noted) Characteristic Symbol Min Typ Max OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC=-1mA) Emitter-Base Breakdown Voltage (IE=-50 µΑ ) Collector-Base Breakdown Voltage (IC=-50 µA) Collector Cutoff Current (VCB=-50V) Emit...
