Leshan Radio Company L2SC2411KQLT1G
Medium Power Transistor NPN silicon
| Part No. | L2SC2411KQLT1G |
|---|---|
| Datasheet | L2SC2411KQLT1G Download |
| Manufacturer |  Leshan Radio Company |
| Description | Medium Power Transistor NPN silicon |
| Buy | Stock & Price |
MAXIMUM RATINGS
(TA = 25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 40 32 5 0.5 0.2 150 -55~+150 *PC must not be exceeded.ELECTRICAL CHARACTERISTICS
(TA= 25°C) Parameter Symbol Min. Typ Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltgae Collector cutoff current Emitter cutoff current DC current transfer ratio Collcetor-emitter saturation voltage Transition frequency Output capacitance hFE values are classified as follows: Item P Q R hFE 82~180 120~270 180~390 BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) fT Cob 40 32 5 82 - 250 6.0 Unit V V V A* W °C °C Max. 1 1 390 0.4 - Unit V V V µA µA V MHz pF L2SC2411K*LT1 3 1 2 SOT– 23 (TO–236AB) 1 BASE 3 COLLECTOR 2 EMITTER Conditions IC=100µA IC=1mA IE=100µA VCB=20V VEB=4V VCE=3V IC/IB=500mA/50mA VCE=5V,IE=-20mA,f=100MHz VCB=10V,IE=0A,f=1MHz L2SC2411K*LT1-1/4 LESHAN RADIO COMPANY, LTD.
