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L2SC3837QLT1G - High-Frequency Amplifier Transistor

Key Features

  • 1.High transition frequency. (Typ. fT=1.5GHz) 2.Small rbb`Cc and high gain. (Typ.6ps) 3.Small NF. 4.We declare that the material of product compliance with RoHS requirements. 5.S- Prefix for Automotive and Other.

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Datasheet Details

Part number L2SC3837QLT1G
Manufacturer Leshan Radio Company
File Size 72.33 KB
Description High-Frequency Amplifier Transistor
Datasheet download datasheet L2SC3837QLT1G Datasheet

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LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor z Features 1.High transition frequency.(Typ.fT=1.5GHz) 2.Small rbb`Cc and high gain.(Typ.6ps) 3.Small NF. 4.We declare that the material of product compliance with RoHS requirements. 5.S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Value Collector-Base Voltage VCBO 30 Collector-Emitter Voltage VCEO 18 Emitter-base voltage VEBO 3 Collector Current IC 50 Collector power dissipation PC 0.