L2SD1781KQLT3G - Medium Power Transistor

Datasheet Summary

Features

1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ. ) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197KXLT1G 4) We declare that the material of product compliance with RoHS requirements. 5) S- Prefix for Automotive and Other.

Leshan Radio Company

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Datasheet Details

Part number	L2SD1781KQLT3G
Manufacturer	Leshan Radio Company
File Size	109.83 KB
Description	Medium Power Transistor
Datasheet	L2SD1781KQLT3G Datasheet
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Full PDF Text Transcription

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LESHAN RADIO COMPANY, LTD. Medium Power Transistor (32V, 0.8A) L2SD1781KQLT1G L2SD1781KQLT1G Series S-L2SD1781KQLT1G Series FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197KXLT1G 4) We declare that the material of product compliance with RoHS requirements. 5) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

Published: Aug 7, 2015 |