L2SD1781KQLT3G Datasheet | Leshan Radio Company

LESHAN RADIO PANY, LTD. Medium Power Transistor (32V, 0.8A) L2SD1781KQLT1G L2SD1781KQLT1G Series S-L2SD1781KQLT1G Series FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500m A / 50m A) 2) High current capacity in pact package. 3) plements the L2SB1197KXLT1G 4) We declare that the material of product pliance with Ro HS requirements. 5) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 1 2 SOT-23 /TO-236AB FStructure Epitaxial planar type NPN silicon...