| Part number | L2SD1781KQLT3G |
|---|---|
| Datasheet | L2SD1781KQLT3G-LeshanRadioCompany.pdf |
| File Size | 109.83 KB |
| Manufacturer | Leshan Radio Company |
| Description | Medium Power Transistor |
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VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in pact package. 3) plements the L2SB1197KXLT1G 4) We declare that the material of product pliance with RoHS requirements. 5) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements;.
See all Leshan Radio Company datasheets
| Part Number | Description |
|---|---|
| L2SD1781KQLT1 | Medium Power Transistor |
| L2SD1781KQLT1G | Medium Power Transistor |
| L2SD1781KRLT1 | Medium Power Transistor |
| L2SD1781KRLT1G | Medium Power Transistor |
| L2SD1781KRLT3G | Medium Power Transistor |
| L2SD2114KVLT1 | Epitaxial planar type NPN silicon transistor |
| L2SD2114KVLT1G | Epitaxial planar type NPN silicon transistor |
| L2SD2114KVLT3G | NPN silicon transistor |
| L2SD2114KWLT1 | Epitaxial planar type NPN silicon transistor |
| L2SD2114KWLT1G | Epitaxial planar type NPN silicon transistor |
