L4501DW1T1
L4501DW1T1 is Silicon NPN Epitaxial Planer Transistor manufactured by Leshan Radio Company.
Feature
.. Pb-Free Package is available.
6 5
1 2 3
SC-88/SOT-363
MAXIMUM RATINGS
Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector current-continuoun Characteristic Total Device Dissipation FR-5 Board, (1) TA=25 C Thermal Resistance, Junction to Ambient Junction and Storage Temperature R
JA o
Symbol VCEO VCBO VEBO IC
Ratings 50 60 7 150 Symbol PD
Unit V V V m Adc Max 380 328 -55 to +150 Unit m W o
THERMAL CHARATEERISTICS
C/W o
Tj ,Tstg
DEVICE MARKING
L4501DW1T1=5H
ELECTRICAL CHARACTERISTICS (TA=25o C unless otherwise noted)
Characteristic Symbol V(BR)CEO V(BR)EBO V(BR)CBO Min 50 7 60 Typ Max Unit V V V
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC=1m A) Emitter-Base Breakdown Voltage (IE=50 A) Collector-Base Breakdown Voltage (IC=50 A) Collector Cutoff Current
(VCB=60V)
ICBO
- -
L4501DW1T1-1/3
LESHAN RADIO PANY, LTD.
EMITTER CUTOFF CURRENT VEB=7V
..
IEBO
- -
ON CHARACTERISTICS
DC Current Gain (IC=1m A, VCE=6.0V) Collector-Emitter Saturation Voltage (IC=50m A,IB=5m A) Hfe 120 560
VCE(SAT) Ft Cobo
- 180 2
0.4 3.5
V MHz Pf
SMALL-SIGNAL CHARACTERISTICS...
