LBAT54AWT1G Datasheet | Leshan Radio Company

LESHAN RADIO PANY, LTD. Dual Series Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. - Extremely Fast Switching Speed - Low Forward Voltage - 0.35 Volts (Typ) @ I F = 10 m Adc We declare that the material of product pliance with Ro HS requirements. ORDERING INFORMATION Device LBAT54AWT1G LBAT54AWT3G Marking B7 B7 Shipping 3000/Tape & Reel 10000/Tape & Reel 1 2 SOT- 323 (SC- 70) 3 ANODE CATHODE 1 2 CATHODE DEVICE MARKING LBAT54AWT1G= B7 MAXIMUM RATINGS (T J = 125°C unless otherwise noted) Rating Reverse Voltage Forward Power Dissipation @ T A = 25°C Derate above 25°C Forward Current(DC) Junction Temperature Storage Temperature Range Symbol VR PF IF TJ T stg Value 30 Unit Volts 200 1.6 200Max 125Max - 55 to +150 m W m W/°C m A °C °C ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (I R = 10 µA) Total Capacitance (V R = 1.0 V, f = 1.0 MHz) Reverse Leakage (V R = 25 V) Forward Voltage (I F = 0.1 m Adc) Forward Voltage (I F = 30 m Adc) Forward Voltage (I F = 100 m Adc) Reverse Recovery Time (I F = I R = 10 m Adc, I R(REC) = 1.0 m Adc, Figure 1) Forward Voltage (I F = 1.0 m Adc) Forward Voltage (I F = 10 m Adc) Forward Current (DC) Repetitive Peak Forward Current Non- Repetitive Peak Forward Current (t < 1.0 s) Symbol V(BR)R CT IR VF VF VF...