Leshan Radio Company LBC807-25LT1
General Purpose Transistors PNP Silicon
| Part No. | LBC807-25LT1 |
|---|---|
| Datasheet | LBC807-25LT1 Download |
| Manufacturer |  Leshan Radio Company |
| Description | General Purpose Transistors PNP Silicon |
| Buy | Stock & Price |
MAXIMUM RATINGS
Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Symbol V CEO V CBO V EBO Value –45 –50 –5.0 –500 Unit V V V mAdc IC THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Symbol PD 225 1.8 R θJA PD 300 2.4 R θJA T J , T stg 417 –55 to +150 mW mW/°C °C/W °C 556 mW mW/°C °C/W Max Unit LBC807_S-1/3 LESHAN RADIO COMPANY, LTD. LBC807 SeriesELECTRICAL CHARACTERISTICS
(T A = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (I C = –10 mA) Collector–Emitter Breakdown Voltage (V EB = 0, IC = –10 µA) V(BR)CES –50 — — V V(BR)CE...
