LBC807-40LT1
LBC807-40LT1 is (LBC807-xxLT1) General Purpose Transistors PNP Silicon manufactured by Leshan Radio Company.
- Part of the LBC807-16LT1 comparator family.
- Part of the LBC807-16LT1 comparator family.
LESHAN RADIO PANY, LTD.
General Purpose Transistors
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PNP Silicon
FEATURE
ƽCollector current capability IC = -500 m A. ƽCollector-emitter voltage VCEO(max) = -45 V. ƽGeneral purpose switching and amplification. ƽNPN plement: LBC817 Series. ƽPb-Free Package is available.
LBC807-16LT1 LBC807-25LT1 LBC807-40LT1
1 2
DEVICE MARKING AND ORDERING INFORMATION
Device LBC807-16LT1 LBC807-16LT1G LBC807-25LT1 LBC807-25LT1G LBC807-40LT1 LBC807-40LT1G Marking 5A 5A (Pb-Free) 5B 5B (Pb-Free) 5C 5C (Pb-Free) Shipping 3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel
1 BASE
SOT- 23
3 COLLECTOR
2 EMITTER
MAXIMUM RATINGS
Rating Collector- Emitter Voltage Collector- Base Voltage Emitter- Base Voltage Collector Current
- Continuous Symbol V CEO V CBO V
Value
- 45
- 50
- 5.0
- 500
Unit V V V m Adc
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR- 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature 1. FR- 5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Symbol PD 225 1.8 R θJA PD 300 2.4 R θJA T J , T stg 417
- 55 to +150 m W m W/°C °C/W °C 556 m W m W/°C °C/W Max Unit
LBC807_S-1/3
LESHAN RADIO PANY, LTD.
LBC807...
