Leshan Radio Company LBC807WT1
General Purpose Transistors
| Part No. | LBC807WT1 |
|---|---|
| Datasheet | LBC807WT1 Download |
| Manufacturer |  Leshan Radio Company |
| Description | General Purpose Transistors |
| Buy | Stock & Price |
MAXIMUM RATINGS
Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Symbol V CEO V CBO V EBO Value –45 –50 –5.0 –500 Unit V V V mAdc 1 2 SOT–323 /SC-70 IC THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD 225 1.8 556 300 2.4 417 –55 to +150 mW mW/°C °C/W mW mW/°C °C/W °C Max Unit R θJA PD R θJA T J , T stg DEVICE MARKING LBC807WT1 = 5AELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = –10 mA) Collector–Emitter Breakdown Voltage (VEB = 0, I C = –10µA) Emitter–Base Breakdown Voltage (IE = –1.0 µA) Collector Cutoff Current (VCB = –20 V) (VCB = –20 V, T J = 150°C) 1. FR–5 = 1.0 x 0.75 x 0.062 in.
