Leshan Radio Company LBC846ALT3G
General Purpose Transistors
APPLICATIONS
Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. LBC846ALT1G Series S-LBC846ALT1G Series 3MAXIMUM RATINGS
Rating Symbol Collector–Emitter Voltage LBC846 LBC847, LBC850 LBC848, LBC849 VCEO Collector–Base Voltage LBC846 LBC847, LBC850 LBC848, LBC849 VCBO Emitter–Base Voltage LBC846 LBC847, LBC850 LBC848, LBC849 VEBO Collector Current – Continuous THERMAL CHARACTERISTICS IC Characteristic Symbol Total Device Dissipation FR–5 Board (Note 1.) TA = 25°C Derate above 25°C PD Thermal Resistance, Junction to Ambient (Note 1.) RqJA Total Device Dissipation Alumina Substrate (Note 2.) TA = 25°C Derate above 25°C PD Thermal Resistance, Junction to Ambient (Note 2.) RqJA Junction and Storage Temperature Range TJ, Tstg 1. FR–5 = 1.0 x 0.75 x 0.062 in 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Value 65 45 30 80 50 30 6.0 6.0 5.0 100 Max 225 1.8 556 300 2.4 417 –55 to +150 Unit Vdc Vdc Vdc mAdc Unit mW mW/°C °C/W mW mW/°C °C/W °C 1 2 SOT–23 1 B ASE 3 COLLECT OR 2 EMIT T ER MARKING DIAGRAM 3 xx 12 xx= Device Marking (See Table Below) Rev.A 1/13 LESHAN RADIO COMPANY, LTD.