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LBC846ALT3G Datasheet PDF

Leshan Radio Company LBC846ALT3G

General Purpose Transistors

Part No. LBC846ALT3G
Datasheet LBC846ALT3G Download
Manufacturer
Leshan Radio Company
Description General Purpose Transistors
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LBC846ALT3G datasheet page 1 preview

APPLICATIONS

Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. LBC846ALT1G Series S-LBC846ALT1G Series 3

MAXIMUM RATINGS

Rating Symbol Collector–Emitter Voltage LBC846 LBC847, LBC850 LBC848, LBC849 VCEO Collector–Base Voltage LBC846 LBC847, LBC850 LBC848, LBC849 VCBO Emitter–Base Voltage LBC846 LBC847, LBC850 LBC848, LBC849 VEBO Collector Current – Continuous THERMAL CHARACTERISTICS IC Characteristic Symbol Total Device Dissipation FR–5 Board (Note 1.) TA = 25°C Derate above 25°C PD Thermal Resistance, Junction to Ambient (Note 1.) RqJA Total Device Dissipation Alumina Substrate (Note 2.) TA = 25°C Derate above 25°C PD Thermal Resistance, Junction to Ambient (Note 2.) RqJA Junction and Storage Temperature Range TJ, Tstg 1. FR–5 = 1.0 x 0.75 x 0.062 in 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Value 65 45 30 80 50 30 6.0 6.0 5.0 100 Max 225 1.8 556 300 2.4 417 –55 to +150 Unit Vdc Vdc Vdc mAdc Unit mW mW/°C °C/W mW mW/°C °C/W °C 1 2 SOT–23 1 B ASE 3 COLLECT OR 2 EMIT T ER MARKING DIAGRAM 3 xx 12 xx= Device Marking (See Table Below) Rev.A 1/13 LESHAN RADIO COMPANY, LTD.
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