Leshan Radio Company LBC856BWT1G
General Purpose Transistors PNP Silicon
| Part No. | LBC856BWT1G |
|---|---|
| Datasheet | LBC856BWT1G Download |
| Manufacturer |  Leshan Radio Company |
| Description | General Purpose Transistors PNP Silicon |
| Buy | Stock & Price |
FEATURES
We declare that the material of product compliance with RoHS requirements. LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G LBC858AWT1G, BWT1G CWT1G 3MAXIMUM RATINGS
Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Symbol V CEO V CBO V EBO BC856 –65 –80 –5.0 –100 BC857 –45 –50 –5.0 –100 BC858 –30 –30 –5.0 –100 Unit V V V mAdc 1 2 SOT– 323 / SC-70 IC 3 COLLECTOR THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD R θJA T J , T stg Max 150 833 –55 to +150 Unit mW °C/W °C 2 EMITTER 1 BASE DEVICE MARKING LBC856AWT1G= 3A; LBC856BWT1G= 3B; LBC857AWT1G= 3E; LBC857BWT1G = 3F; LBC858AWT1G= 3J; LBC858BWT1G= 3K; LBC858CWT1G= 3LELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = –10 mA) Collector–Emitter Break...
