LBC857CWT1G Overview
General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT 323/ SC 70 which is designed for low power surface mount applications.
LBC857CWT1G Key Features
- Continuous I C
- 10 µA)
- 1.0 µA)
- 30 V) (VCB =
- 30 V, TA = 150°C)
- 4.0 µA
- 0.5 mA) Collector-Emitter Saturation Voltage (I C = -100 mA, I B =
- Bandwidth Product (I C =
- 10 mA, V CE =
- 5.0 Vdc, f = 100 MHz) Output Capacitance (V CB =