Leshan Radio Company LBC858BLT3G
General Purpose Transistors
| Part No. | LBC858BLT3G |
|---|---|
| Datasheet | LBC858BLT3G Download |
| Manufacturer |  Leshan Radio Company |
| Description | General Purpose Transistors |
| Buy | Stock & Price |
APPLICATIONS
Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. LBC857CLT1G S-LBC857CLT1G Series 3MAXIMUM RATINGS
(TA = 25°C unless otherwise noted) Rating Symbol Value Collector-Emitter Voltage LBC856 LBC857 LBC858, LBC859 VCEO –65 –45 –30 Collector-Base Voltage LBC856 LBC857 LBC858, LBC859 VCBO –80 –50 –30 Emitter–Base Voltage Collector Current – Continuous THERMAL CHARACTERISTICS VEBO IC –5.0 –100 Characteristic Symbol Max Total Device Dissipation FR–5 Board, (Note 1.) TA = 25°C Derate above 25°C PD 225 1.8 Thermal Resistance, Junction to Ambient RqJA 556 Total Device Dissipation Alumina Substrate, (Note 2.) TA = 25°C Derate above 25°C PD 300 2.4 Thermal Resistance, Junction to Ambient RqJA 417 Junction and Storage Temperature TJ, Tstg 1. FR–5 = 1.0 x 0.75 x 0.062 in 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. –55 to +150 Unit V V V mAdc Unit mW mW/°C °C/W mW mW/°C °C/W °C 1 2 SOT–23 1 B ASE 3 COLLECT OR 2 EMIT T ER MARKING DIAGRAM 3 xx 12 xx= Device Marking (See Table Below) Rev.O 1/7 LESHAN RADIO COMPANY, LTD.
