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LBC858CDW1T1G - Dual-Channel Transistor

This page provides the datasheet information for the LBC858CDW1T1G, a member of the LBC856ADW1T1G Dual-Channel Transistor family.

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Datasheet Details

Part number LBC858CDW1T1G
Manufacturer Leshan Radio Company
File Size 169.28 KB
Description Dual-Channel Transistor
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Full PDF Text Transcription

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LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. We declare that the material of product compliance with RoHS requirements. • Device Marking: (S-)LBC856ADW1T1G= 3A (S-)LBC856BDW1T1G= 3B (S-)LBC857BDW1T1G= 3F (S-)LBC857CDW1T1G= 3G (S-)LBC858BDW1T1G= 3K (S-)LBC858CDW1T1G = 3L MAXIMUM RATINGS Rating Symbol BC856 BC857 BC858 Unit Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current – Continuous VCEO VCBO VEBO IC –65 –80 –5.0 –100 –45 –50 –5.0 –100 –30 –30 –5.
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