LBC85XBDW1T1G
LBC85XBDW1T1G is Dual General Purpose Transistors manufactured by Leshan Radio Company.
LESHAN RADIO PANY, LTD.
Dual General Purpose Transistors ..
These transistors are designed for general purpose amplifier applications. They are housed in the SOT- 363/SC- 88 which is designed for low power surface mount applications.
We declare that the material of product pliance with Ro HS requirements.
6 5 4
1 2 3
- Device Marking:
LBC856BDW1T1G= 3B LBC857BDW1T1G= 3F LBC857CDW1T1G= 3G LBC858BDW1T1G= 3K LBC858CDW1T1G = 3L
MAXIMUM RATINGS
Rating Collector- Emitter Voltage Collector- Base Voltage Emitter- Base Voltage Collector Current
- Continuous Symbol VCEO VCBO VEBO IC BC856
- 65
- 80
- 5.0
- 100 BC857
- 45
- 50
- 5.0
- 100 BC858
- 30
- 30
- 5.0
- 100 Unit V V V m Adc (4) (3)
SOT-363
(2) (1)
Q1 Q2
(5)
(6)
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation Per Device FR- 5 Board (Note 1.) TA = 25°C Derate Above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Range 1. FR- 5 = 1.0 x 0.75 x 0.062 in Symbol PD Max 380 250 Unit m...
