LDTA114GLT1G
Key Features
- Only the on/off conditions need to be set for operation, making the device design easy
- V IC= -50µA Collector-emitter breakdown voltage BVCEO -50
- V IC= -1mA Emitter-base breakdown voltage BVEBO -5
- V IE= -720µA Collector cutoff current ICBO
- 0.5 µA VCB= -50V Emitter cutoff current IEBO -300 - -580 µA VEB= -4V Collector-emitter saturation voltage VCE(sat)
- 0.3 V IC= -10mA, IB= -0.5mA DC current transfer ratio hFE 30
- IC= -5mA, VCE= -5V Emitter-base resistance Transition frequency R2 7 10 13 kΩ
- DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982
