• Part: LDTA115ELT3G
  • Description: Bias Resistor Transistor
  • Category: Transistor
  • Manufacturer: Leshan Radio Company
  • Size: 269.44 KB
LDTA115ELT3G Datasheet (PDF) Download
Leshan Radio Company
LDTA115ELT3G

Key Features

  • Only the on/off conditions need to be set for operation, making the device design easy
  • 100 Power dissipation PD 150 Junction temperature Tj 150 Storage temperature Tstg
  • 82 70 0.8 - Typ
  • 100 1 250 Max
  • 0.3 -0.15 -0.5
  • 130 1.2 - Unit V V mA µA
  • MHz Conditions VCC= -5V, IO= -100µA VO= -0.3V, IO= -1mA IO= -5mA, II= -0.25mA VI= -5V VCC= -50V, VI=0V IO= -5mA, VO= -5V
  • DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982